Fuji Electric power semiconductors are used by original equipment manufacturers (OEMs) to improve the efficiency, reliability and quality of their products and to limit energy consumption.
In fact, the Japanese company’s power modules offer high energy efficiency thanks to cutting-edge technology, and guarantee excellent savings in overall space and a reduction in operating costs.
Fuji Electric’s seventh generation IGBT semiconductors allow maximum continuous temperatures of 175 ° C (Tjop), faster switching and high reliability.
Fuji Electric’s IGBT modules (or insulated gate bipolar transistors) are a high-performance seventh-generation IGBT / FWD chipset with a compact design that offers more power. It has easy-to-assemble ecological modules, seamless options and RoHS compliance.
Switching characteristics when the IGBT inverter is turned on include: better compromise of noise loss, reduced dv / dt ignition and excellent dic / dt ignition. Switch-off switching characteristics include: soft switching behavior and absence of switch-off oscillation.